Quantum Theory of Flicker Noise in Metal Films

Flicker (1/f^gamma) voltage noise spectrum is derived from finite-temperature quantum electromagnetic fluctuations produced by elementary charge carriers in external electric field. It is suggested that deviations of the frequency exponent \gamma from unity, observed in thin metal films, can be attributed to quantum backreaction of the conducting medium on the fluctuating field of the charge carrier. This backreaction is described phenomenologically in terms of the effective momentum space dimensionality, D. Using the dimensional continuation technique, it is shown that the combined action of the photon heat bath and external field results in a 1/f^gamma-contribution to the spectral density of the two-point correlation function of electromagnetic field. The frequency exponent is found to be equal to 1 + delta, where delta = 3 - D is a reduction of the momentum space dimensionality. This result is applied to the case of a biased conducting sample, and a general expression for the voltage power spectrum is obtained which possesses all characteristic properties of observed flicker noise spectra. The range of validity of this expression covers well the whole measured frequency band. Gauge independence of the power spectrum is proved. It is shown that the obtained results naturally resolve the problem of divergence of the total noise power. A detailed comparison with the experimental data on flicker noise measurements in metal films is given.Comment: 20 pages, 2 tables, 2 figure

Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport

We present a microscopic analysis of shot-noise suppression due to long-range Coulomb interaction in semiconductor devices under ballistic transport conditions. An ensemble Monte Carlo simulator self-consistently coupled with a Poisson solver is used for the calculations. A wide range of injection-rate densities leading to different degrees of suppression is investigated. A sharp tendency of noise suppression at increasing injection densities is found to scale with a dimensionless Debye length related to the importance of space-charge effects in the structure.Comment: RevTex, 4 pages, 4 figures, minor correction

Shot Noise Suppression in Avalanche Photodiodes

We identify a new shot noise suppression mechanism in a thin (~100 nm) heterostructure avalanche photodiode. In the low-gain regime the shot noise is suppressed due to temporal correlations within amplified current pulses. We demonstrate in a Monte Carlo simulation that the effective excess noise factors can be <1, and reconcile the apparent conflict between theory and experiments. This shot noise suppression mechanism is independent of known mechanisms such as Coulomb interaction, or reflection at heterojunction interfaces.Comment: Phys. Rev. Lett., accepted for publicatio

Statistical theory of shot noise in quasi-1D Field Effect Transistors in the presence of electron-electron interaction

We present an expression for the shot noise power spectral density in quasi-one dimensional conductors electrostatically controlled by a gate electrode, that includes the effects of Coulomb interaction and of Pauli exclusion among charge carriers. In this sense, our expression extends the well known Landauer-Buttiker noise formula to include the effect of Coulomb interaction through induced fluctuations in the device potential. Our approach is based on the introduction of statistical properties of the scattering matrix and on a second-quantization many-body description. From a quantitative point of view, statistical properties are obtained by means of Monte Carlo simulations on a ensemble of different configurations of injected states, requiring the solution of the Poisson-Schrodinger equation on a three-dimensional grid, with the non-equilibrium Green functions formalism. In a series of example, we show that failure to consider the effects of Coulomb interaction on noise leads to a gross overestimation of the noise spectrum of quasi-one dimensional devices

Anomalous crossover between thermal and shot noise in macroscopic diffusive conductors

We predict the existence of an anomalous crossover between thermal and shot noise in macroscopic diffusive conductors. We first show that, besides thermal noise, these systems may also exhibit shot noise due to fluctuations of the total number of carriers in the system. Then we show that at increasing currents the crossover between the two noise behaviors is anomalous, in the sense that the low frequency current spectral density displays a region with a superlinear dependence on the current up to a cubic law. The anomaly is due to the non-trivial coupling in the presence of the long range Coulomb interaction among the three time scales relevant to the phenomenon, namely, diffusion, transit and dielectric relaxation time.Comment: 4 pages, 2 figure

Low frequency shot noise in double-barrier resonant-tunneling structures in a strong magnetic field

Low frequency shot noise and dc current profiles for a double-barrier resonant-tunneling structure (DBRTS) under a strong magnetic field applied perpendicular to the interfaces have been studied. Both the structures with 3D and 2D emitter have been considered. The calculations, carried out with the Keldysh Green's function technique, show strong dependencies of both the current and noise profiles on the bias voltage and magnetic field. The noise spectrum appears sensitive to charge accumulation due to barriere capacitances and both noise and dc-current are extremely sensitive to the Landau levels' broadening in the emitter electrode and can be used as a powerful tool to investigate the latter. As an example, two specific shapes of the levels' broadening have been considered - a semi-elliptic profile resulting from self-consistent Born approximation, and a Gaussian one resulting from the lowest order cumulant expansion.Comment: 15 pages Revtex, 8 Postscript figures included. To be published in Journal of Physics: Condensed matte

Scaling of 1/f noise in tunable break-junctions

We have studied the $1/f$ voltage noise of gold nano-contacts in electromigrated and mechanically controlled break-junctions having resistance values $R$ that can be tuned from 10 $\Omega$ (many channels) to 10 k$\Omega$ (single atom contact). The noise is caused by resistance fluctuations as evidenced by the $S_V\propto V^2$ dependence of the power spectral density $S_V$ on the applied DC voltage $V$. As a function of $R$ the normalized noise $S_V/V^2$ shows a pronounced cross-over from $\propto R^3$ for low-ohmic junctions to $\propto R^{1.5}$ for high-ohmic ones. The measured powers of 3 and 1.5 are in agreement with $1/f$-noise generated in the bulk and reflect the transition from diffusive to ballistic transport

Shot Noise in Linear Macroscopic Resistors

We report on a direct experimental evidence of shot noise in a linear macroscopic resistor. The origin of the shot noise comes from the fluctuation of the total number of charge carriers inside the resistor associated with their diffusive motion under the condition that the dielectric relaxation time becomes longer than the dynamic transit time. Present results show that neither potential barriers nor the absence of inelastic scattering are necessary to observe shot noise in electronic devices.Comment: 10 pages, 5 figure